DIODE SCHOTTKY 20V 3A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 410 mV @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 200 µA @ 20 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-25ETS12S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 25A TO263AB |
|
1N5395-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1.5A DO204AL |
|
SB5100Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 5A DO201AD |
|
1N6626Roving Networks / Microchip Technology |
DIODE GEN PURP 220V 1.75A AXIAL |
|
NTE605ANTE Electronics, Inc. |
VARISTOR TEMP COMP DIODE DO-35 |
|
BAV19 A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 200MA DO35 |
|
SK13BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO214AA |
|
PMEG3020BEP,115Nexperia |
DIODE SCHOTTKY 30V 2A SOD128 |
|
BAT54,215Nexperia |
DIODE SCHOTTKY 30V 200MA TO236AB |
|
VS-4ESH02-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
|
SKL13BHM4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO214AA |
|
AR3PGHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.8A TO277A |
|
US2MA-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 2A DO214AC |