DIODE SCHOTTKY 30V 2A SOD128
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 450 mV @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 100 µA @ 30 V |
Capacitance @ Vr, F: | 340pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | CFP5 |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAT54,215Nexperia |
DIODE SCHOTTKY 30V 200MA TO236AB |
|
VS-4ESH02-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
|
SKL13BHM4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO214AA |
|
AR3PGHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.8A TO277A |
|
US2MA-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 2A DO214AC |
|
CMS03(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 3A MFLAT |
|
VS-41HFR60Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
|
UF4002 A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
NTE6032NTE Electronics, Inc. |
R-1KV PRV 40A FAST REC KK |
|
1SS400TE61ROHM Semiconductor |
DIODE GEN PURP 80V 100MA EMD2 |
|
VS-SD200R16M12CVishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 200A DO205AC |
|
HER207G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 2A DO204AC |
|
UGA15120 C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 15A TO220AC |