DIODE GEN PURP 400V 8A TO263AB
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, FRED Pt® |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 43 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
V35DM120-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 6.3A TO263AC |
|
SFF1006G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 10A ITO220AB |
|
S15GLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1.5A SOD123W |
|
S85JGeneSiC Semiconductor |
DIODE GEN PURP 600V 85A DO5 |
|
MUR420GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 4A DO201AD |
|
1N3613Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1A AXIAL |
|
BAV21,113Nexperia |
DIODE GEN PURP 200V 250MA ALF2 |
|
DFLR1400-7Zetex Semiconductors (Diodes Inc.) |
DIODE GP 400V 1A POWERDI123 |
|
VS-305U160Vishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 330A DO205AB |
|
DHG30I600PAWickmann / Littelfuse |
DIODE GEN PURP 600V 30A TO220AC |
|
JAN1N3595-1Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 150MA DO35 |
|
1N3879RGeneSiC Semiconductor |
DIODE GEN PURP REV 50V 6A DO4 |
|
1N4007G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 1A DO204AL |