DIODE SCHOTTKY 80V 4A TO277A
Type | Description |
---|---|
Series: | eSMP®, TMBS® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 80 V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 660 mV @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 700 µA @ 80 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
LL103C-GS08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 200MA SOD80 |
|
IMBD4448-E3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOT23 |
|
MUR115GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 150V 1A AXIAL |
|
1N4007E-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
STPS1545FPSTMicroelectronics |
DIODE SCHOTTKY 45V 15A TO220FP |
|
AS4PJHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2.4A TO277A |
|
VS-2EQH02HM3/HVishay General Semiconductor – Diodes Division |
ULTRAFAST RECTIFIER 2A DO-219AD |
|
NTE507NTE Electronics, Inc. |
DIODE GEN PURP 50V 1A DO41 |
|
DZ1070N22KHPSA3IR (Infineon Technologies) |
DIODE GEN PURP 2.2KV 1100A MOD |
|
EAL1JDiotec Semiconductor |
DIODE SFR DO-213AA 600V 1A |
|
SL03-M-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V DO219-M |
|
BYS10-35-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 1.5A DO214AC |
|
RGP30J-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |