DIODE GEN PURP 150V 1A AXIAL
Type | Description |
---|---|
Series: | SWITCHMODE™ |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 875 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 2 µA @ 150 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4007E-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
STPS1545FPSTMicroelectronics |
DIODE SCHOTTKY 45V 15A TO220FP |
|
AS4PJHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2.4A TO277A |
|
VS-2EQH02HM3/HVishay General Semiconductor – Diodes Division |
ULTRAFAST RECTIFIER 2A DO-219AD |
|
NTE507NTE Electronics, Inc. |
DIODE GEN PURP 50V 1A DO41 |
|
DZ1070N22KHPSA3IR (Infineon Technologies) |
DIODE GEN PURP 2.2KV 1100A MOD |
|
EAL1JDiotec Semiconductor |
DIODE SFR DO-213AA 600V 1A |
|
SL03-M-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V DO219-M |
|
BYS10-35-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 1.5A DO214AC |
|
RGP30J-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
|
JANTXV1N645-1Roving Networks / Microchip Technology |
DIODE GEN PURP 225V 400MA DO35 |
|
1N5406GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
|
UH2DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |