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ES1LJHM2G

ES1LJHM2G

DIODE GEN PURP 600V 1A DO214AC

84-CBSA-4.75X4.75X0.8

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RF SHIELD 4.75" X 4.75" T/H

ES1LJHM2G

ES1LJHM2G

Image is for reference, please contact us to get the real picture

Part No :

ES1LJHM2G

Manufacturer
TSC (Taiwan Semiconductor)
Description
DIODE GEN PURP 600V 1A DO214AC
Catalog
Diodes - Rectifiers - Single
Availability
197519 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 30 - Nov 03 2025
PDF
ES1LJHM2G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:18pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:DO-214AC (SMA)
Operating Temperature - Junction:-55°C ~ 150°C
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