DIODE GEN PURP 100V 3A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 40 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4005B-GComchip Technology |
DIODE GEN PURP 600V 1A DO41 |
|
JANTXV1N3600Roving Networks / Microchip Technology |
ZENER DIODE |
|
V8P10HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
|
SDURB1030TRSMC Diode Solutions |
DIODE GEN PURP 300V D2PAK |
|
RGP10J-E3/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
S1PA-M3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO220AA |
|
BAS86-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 200MA SOD80 |
|
SK1060D1Diotec Semiconductor |
SCHOTTKY DPAK 60V 10A |
|
JANTX1N5802URSRoving Networks / Microchip Technology |
DIODE GEN PURP 50V 1A APKG |
|
BAS83-GS08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
|
1N5806USE3Roving Networks / Microchip Technology |
UFR,FRR |
|
SR005HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 500MA DO204AL |
|
NTE5854NTE Electronics, Inc. |
R-200PRV 6A CATH CASE |