DIODE GEN PURP 3KV 1650A DO200AC
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 3000 V |
Current - Average Rectified (Io): | 1650A |
Voltage - Forward (Vf) (Max) @ If: | 2.6 V @ 4000 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | Clamp On |
Package / Case: | DO-200AC, K-PUK |
Supplier Device Package: | DO-200AC, K-PUK |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CDBJSC3650-GComchip Technology |
DIODE, SIC STKY 3A 650V TO-220-2 |
|
MBR15200STRSMC Diode Solutions |
DIODE SCHOTTKY 200V 15A TO277B |
|
FR2DDiotec Semiconductor |
DIODE FR SMB 200V 2A |
|
STTH30L06WSTMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
|
SR802 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 8A DO201AD |
|
FDLL333Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 125V 200MA SOD80 |
|
1N4608Roving Networks / Microchip Technology |
DIODE GEN PURP 85V 200MA DO35 |
|
RS1JL M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 800MA SUBSMA |
|
BAT46WFILMSTMicroelectronics |
DIODE SCHOTTKY 100V 150MA SOT323 |
|
NRVTSAF360T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 3A SMA-FL |
|
VS-10ETS12S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
|
UFS350JE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 500V 3A DO214AB |
|
PMEG10010ELR,115Rochester Electronics |
100V, 1 A LOW LEAKAGE CURRENT S |