DIODE SCHOTTKY 100V 150MA SOT323
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 150mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 250 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 75 V |
Capacitance @ Vr, F: | 10pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NRVTSAF360T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 3A SMA-FL |
|
VS-10ETS12S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
|
UFS350JE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 500V 3A DO214AB |
|
PMEG10010ELR,115Rochester Electronics |
100V, 1 A LOW LEAKAGE CURRENT S |
|
CS3G-E3/IVishay General Semiconductor – Diodes Division |
DIODE GPP 400V 3.0A DO-214AB |
|
VS-6EWH06FNTRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
|
BAS21LT1GSanyo Semiconductor/ON Semiconductor |
DIODE GP 250V 200MA SOT23-3 |
|
HSM835JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 35V 8A DO214AB |
|
BAV19W-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 250MA SOD123 |
|
SD101BWS-E3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150MW 50V SOD323 |
|
BYM10-1000-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
|
SK18-LTPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 80V 1A DO214AA |
|
VS-86HFR160Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 85A DO203AB |