DIODE SCHOTTKY 40V 0.5A SOD962
5IN DEEP FLANGED LACING BAR
IC MCU 8BIT 16KB FLASH 44VQFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40 V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 820 mV @ 500 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.25 ns |
Current - Reverse Leakage @ Vr: | 80 µA @ 40 V |
Capacitance @ Vr, F: | 18pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 0201 (0603 Metric) |
Supplier Device Package: | DSN0603-2 |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UPS160/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 60V 1A POWERMITE |
|
VS-8TQ080STRLHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 80V 8A TO263AB |
|
B130LAW-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 1A SOD123 |
|
MCL4148R13DComponents |
DIODE GP 75V 150MA MICROMELF |
|
S3AHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AB |
|
ES2BHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AA |
|
UFS340J/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 3A DO214AB |
|
MBR10100Rochester Electronics |
DIODE SCHOTTKY 100V 10A |
|
1N5614Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
SCS215AMCROHM Semiconductor |
DIODE SCHOTTKY 650V 12A TO220FM |
|
BYV29F-400-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC |
|
ACGRA4004-HFComchip Technology |
DIODE GEN PURP 400V 1A DO214AC |
|
1SS250(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 200V 100MA SC59 |