DIODE SCHOTTKY 650V 12A TO220FM
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.55 V @ 12 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 240 µA @ 600 V |
Capacitance @ Vr, F: | 438pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | TO-220FM |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYV29F-400-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC |
|
ACGRA4004-HFComchip Technology |
DIODE GEN PURP 400V 1A DO214AC |
|
1SS250(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 200V 100MA SC59 |
|
RGL41GHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
HS1MFS M3GTSC (Taiwan Semiconductor) |
75NS, 1A, 1000V, HIGH EFFICIENT |
|
V3FL45-M3/HVishay General Semiconductor – Diodes Division |
3A,45V,SMF,TRENCH SKY RECT. |
|
NTE6034NTE Electronics, Inc. |
R-400 PRV 60A CATH CASE |
|
STPS2H100UFSTMicroelectronics |
DIODE SCHOTTKY 100V 2A SMBFLAT |
|
SK25Diotec Semiconductor |
SCHOTTKY SMB 50V 2A |
|
VS-1N3890Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
|
LSIC2SD065C10AWickmann / Littelfuse |
SIC SCHOTTKY DIOD 650V 10A TO252 |
|
S1KHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO214AC |
|
DFLS130L-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 1A POWERDI123 |