Type | Description |
---|---|
Series: | - |
Package: | Bag |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 200 V |
Current - Average Rectified (Io): | 25 A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 12.5 A |
Current - Reverse Leakage @ Vr: | 10 µA @ 200 V |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-Square |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TS50P06G C2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 800V 50A TS-6P |
|
GBU804HD2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 400V 8A GBU |
|
GBU808GTBSMC Diode Solutions |
BRIDGE RECT 1PHASE 800V 8A GBU |
|
NTE53001NTE Electronics, Inc. |
BRIDGE-400VRM 10A |
|
GBJ604TBSMC Diode Solutions |
BRIDGE RECT 1PHASE 400V 6A GBJ |
|
B500C7000ADiotec Semiconductor |
1PH BRIDGE 30X20X3.6 1000V 7A |
|
GBJ1004TBSMC Diode Solutions |
BRIDGE RECT 1PHASE 400V 10A GBJ |
|
RBU203MRectron USA |
BRIDGE RECT GLASS 200V 2A RBU |
|
GBJ35005TBSMC Diode Solutions |
BRIDGE RECT 1PHASE 50V 35A GBJ |
|
DRS407KRectron USA |
BRIDGE RECT GLASS 1000V 4A DK3 |
|
NTE5320NTE Electronics, Inc. |
R-SI BRIDGE 1KV 4A |
|
DBLS159G RDGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 1.4KV 1.5A DBLS |
|
GBPC2502W-E4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 200V 25A GBPC-W |