BRIDGE RECT GLASS 200V 2A RBU
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 200 V |
Current - Average Rectified (Io): | 2 A |
Voltage - Forward (Vf) (Max) @ If: | 1.05 V @ 2 A |
Current - Reverse Leakage @ Vr: | 300 nA @ 200 V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, RBU |
Supplier Device Package: | RBU |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GBJ35005TBSMC Diode Solutions |
BRIDGE RECT 1PHASE 50V 35A GBJ |
|
DRS407KRectron USA |
BRIDGE RECT GLASS 1000V 4A DK3 |
|
NTE5320NTE Electronics, Inc. |
R-SI BRIDGE 1KV 4A |
|
DBLS159G RDGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 1.4KV 1.5A DBLS |
|
GBPC2502W-E4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 200V 25A GBPC-W |
|
BU2008-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 800V 3.5A BU |
|
RBU607MRectron USA |
BRIDGE RECT GLASS 1000V 6A RBU |
|
MDA206GRectron USA |
BRIDGE RECT GLASS 600V 2A RS-1 |
|
KBP208-A1-0000 |
RECT BRIDGE 800V 2A KBP |
|
TS35P05GHC2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 600V 35A TS-6P |
|
DB25-10Diotec Semiconductor |
3PH BRIDGE DB 1000V 25A |
|
RBU407MRectron USA |
BRIDGE RECT GLASS 1000V 4A RBU |
|
CD-MBL106SJ.W. Miller / Bourns |
BRIDGE RECT 1PHASE 600V 1A |