MOSFET 2N-CH 10.6V 8DIP
Type | Description |
---|---|
Series: | EPAD® |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 12mA, 3mA |
Rds On (Max) @ Id, Vgs: | 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: | 810mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPG20N04S4L08ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 40V 20A 8TDSON |
|
FDMS3604SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/23A POWER56 |
|
AO4840EAlpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CHANNEL 40V 6A 8SOIC |
|
SP8K32FRATBROHM Semiconductor |
4V DRIVE NCH+NCH MOSFET (CORRESP |
|
PMDPB70XP,115Rochester Electronics |
NOW NEXPERIA PMDPB70XP - SMALL S |
|
ALD212900PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
|
FW907-TL-ERochester Electronics |
TRANSISTOR |
|
NDS9948Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 60V 2.3A 8-SOIC |
|
ALD1102PALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |
|
EFC4618R-P-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
TC7920K6-GRoving Networks / Microchip Technology |
MOSFET 2N/2P-CH 200V 12VDFN |
|
SQ4949EY-T1_GE3Vishay / Siliconix |
MOSFET 2 P-CH 30V 7.5A 8SOIC |
|
BSC112N06LDATMA1IR (Infineon Technologies) |
TRENCH 40<-<100V |