MOSFET 2N-CH 10.6V 8DIP
MOSFET 2N-CH 10.6V 8SOIC
MOSFET 2N-CH 10.6V 0.08A 8DIP
5 1/2 DIG CUSTOM MB203A DVM BRD
Type | Description |
---|---|
Series: | EPAD®, Zero Threshold™ |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 80mA |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
6LN04CH-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
![]() |
DMC2025UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
![]() |
FDW9926NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
IPG20N06S2L50ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 20A 8TDSON |
![]() |
VMM45-02FWickmann / Littelfuse |
MOSFET 2N-CH 200V 45A TO-240AA |
![]() |
BUK9K52-60E,115Nexperia |
MOSFET 2N-CH 60V 16A LFPAK56D |
![]() |
NTQD6968NR2GRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NTMD6N03R2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 6A 8SOIC |
![]() |
APTC60TAM24TPGRoving Networks / Microchip Technology |
MOSFET 6N-CH 600V 95A SP6-P |
![]() |
ALD110908APALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
![]() |
IPG20N04S4L08ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 40V 20A 8TDSON |
![]() |
FDMS3604SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/23A POWER56 |
![]() |
AO4840EAlpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CHANNEL 40V 6A 8SOIC |