MOSFET N/P-CH 30V 9A/18.5A 8DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N and P-Channel, Common Drain |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9A, 18.5A |
Rds On (Max) @ Id, Vgs: | 50mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 15V |
Power - Max: | 1.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-DFN (3x3) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN3035LWN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 5.5A 8VDFN |
|
AON7810Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 6A 8DFN |
|
BUK7K17-60EXNexperia |
MOSFET 2N-CH 60V 30A 56LFPAK |
|
APTMC120AM25CT3AGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V 105A SP3F |
|
AUIRF7341QTRIR (Infineon Technologies) |
MOSFET 2N-CH 55V 5.1A 8SOIC |
|
TT8M1TRROHM Semiconductor |
MOSFET N/P-CH 20V 2.5A TSST8 |
|
EPC2110ENGRTEPC |
GAN TRANS 2N-CH 120V BUMPED DIE |
|
ALD114904SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
MSCSM120TAM11CTPAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6P |
|
PMDPB56XNEAXNexperia |
MOSFET 2N-CH 30V 3.1A DFN2020D-6 |
|
BSM120D12P2C005ROHM Semiconductor |
MOSFET 2N-CH 1200V 120A MODULE |
|
UM6K31NTNROHM Semiconductor |
MOSFET 2N-CH 60V 0.25A UMT6 |
|
IPB080N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |