MOSFET 2N-CH 1200V 105A SP3F
CABLE MOD 8P8C HD PLG-PLG 32.81'
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 113A (Tc) |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 80A, 20V |
Vgs(th) (Max) @ Id: | 2.2V @ 4mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: | 197nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3800pF @ 1000V |
Power - Max: | 500W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUIRF7341QTRIR (Infineon Technologies) |
MOSFET 2N-CH 55V 5.1A 8SOIC |
|
TT8M1TRROHM Semiconductor |
MOSFET N/P-CH 20V 2.5A TSST8 |
|
EPC2110ENGRTEPC |
GAN TRANS 2N-CH 120V BUMPED DIE |
|
ALD114904SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
MSCSM120TAM11CTPAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6P |
|
PMDPB56XNEAXNexperia |
MOSFET 2N-CH 30V 3.1A DFN2020D-6 |
|
BSM120D12P2C005ROHM Semiconductor |
MOSFET 2N-CH 1200V 120A MODULE |
|
UM6K31NTNROHM Semiconductor |
MOSFET 2N-CH 60V 0.25A UMT6 |
|
IPB080N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
IRF7507TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 20V 1.7A MICRO8 |
|
SIB912DK-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 1.5A SC-75-6 |
|
SSM6L35FU(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 20V 0.18A/0.1A US6 |
|
NTLJD2104PTAGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |