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PM-MOSFET-SIC-SBD~-SP6P
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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | 6 N-Channel (3-Phase Bridge) |
| FET Feature: | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 251A (Tc) |
| Rds On (Max) @ Id, Vgs: | 10.4mOhm @ 120A, 20V |
| Vgs(th) (Max) @ Id: | 2.8V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs: | 696nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9060pF @ 1000V |
| Power - Max: | 1.042kW (Tc) |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | SP6-P |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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