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EPC2100ENGRT

EPC2100ENGRT

GANFET 2 N-CH 30V 9.5A/38A DIE

EPC2100ENGRT

EPC2100ENGRT

Image is for reference, please contact us to get the real picture

Part No :

EPC2100ENGRT

Manufacturer
EPC
Description
GANFET 2 N-CH 30V 9.5A/38A DIE
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
679667 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
EPC2100ENGRT PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs:8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:475pF @ 15V, 1960pF @ 15V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
EPC2100ENGRT is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2100ENGRT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2100ENGRT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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