MOSFET 2N-CH 10.6V 8DIP
Type | Description |
---|---|
Series: | EPAD® |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 12mA, 3mA |
Rds On (Max) @ Id, Vgs: | 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: | 820mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CSD86350Q5DTTexas Instruments |
25V POWERBLOCK N CH MOSFET |
|
EPC2100ENGRTEPC |
GANFET 2 N-CH 30V 9.5A/38A DIE |
|
EM6K33T2RROHM Semiconductor |
MOSFET 2N-CH 50V 0.2A EMT6 |
|
BUK9K6R8-40EXNexperia |
MOSFET 2N-CH 40V 40A 56LFPAK |
|
ALD110900SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
SLA5073Sanken Electric Co., Ltd. |
MOSFET 6N-CH 60V 5A 15-SIP |
|
IPP120N04S3-02Rochester Electronics |
PFET, 120A I(D), 40V, 0.0023OHM, |
|
TT8J3TRROHM Semiconductor |
4V DRIVE PCH+PCH MOSFET |
|
SI7252ADP-T1-GE3Vishay / Siliconix |
DUAL N-CHANNEL 100-V (D-S) MOSFE |
|
FDS89161Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 2.7A 8SOIC |
|
FMM150-0075X2FWickmann / Littelfuse |
MOSFET 2N-CH 75V 120A I4-PAC-5 |
|
BUK9K13-60EXNexperia |
MOSFET 2N-CH 60V 40A LFPAK56D |
|
CPH3407-TL-E-ONRochester Electronics |
N-CHANNEL SILICON MOSFET |