GANFET N-CH 80V 6.8A DIE
Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.4 nC @ 5 V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 210 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPI50R399CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9A TO262-3 |
|
SFP9Z24Rochester Electronics |
MOSFET P-CH 60V 9.7A TO220-3 |
|
DMN61D8LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 470MA SOT23 |
|
APT5015BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 32A TO247 |
|
HUF75545S3Rochester Electronics |
MOSFET N-CH 80V 75A I2PAK |
|
IPD50R1K4CEBTMA1Rochester Electronics |
MOSFET N-CH 500V 3.1A TO252-3 |
|
FCP190N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 17A TO220-3 |
|
FQP20N06TSTURochester Electronics |
MOSFET N-CH 60V 20A TO220-3 |
|
NTAT6H406NT4GRochester Electronics |
MOSFET N-CH 80V 175A ATPAK |
|
NVMFS5C410NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
FDN361BNSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.4A SUPERSOT3 |
|
NTD65N03R-35GRochester Electronics |
MOSFET N-CH 25V 9.5A IPAK |
|
IRF362Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |