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IPD50R1K4CEBTMA1

IPD50R1K4CEBTMA1

MOSFET N-CH 500V 3.1A TO252-3

IPD50R1K4CEBTMA1

IPD50R1K4CEBTMA1

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Part No :

IPD50R1K4CEBTMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 3.1A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
613661 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 02 - Jun 06 2024
PDF
IPD50R1K4CEBTMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id:3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:178 pF @ 100 V
FET Feature:-
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50R1K4CEBTMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD50R1K4CEBTMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD50R1K4CEBTMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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