MOSFET P-CH 30V 700MA SOT23
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 700mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 250mOhm @ 400mA, 10V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 160 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STL38N65M5STMicroelectronics |
MOSFET N-CH 650V PWRFLAT HV |
|
FQD5N20LTFRochester Electronics |
MOSFET N-CH 200V 3.8A DPAK |
|
FQI5N15TURochester Electronics |
MOSFET N-CH 150V 5.4A I2PAK |
|
GKI07301Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 6A 8DFN |
|
SI2367DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.8A SOT23-3 |
|
STL42N65M5STMicroelectronics |
MOSFET N-CH 650V 4A PWRFLAT HV |
|
SUG80050E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 100A TO247AC |
|
NTP22N06LRochester Electronics |
MOSFET N-CH 60V 22A TO220AB |
|
IMW65R027M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
IRFS3004TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
SQJ431EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 200V 12A PPAK SO-8 |
|
NTHL080N120SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 1200V 44A TO247-3 |
|
TK40A06N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A TO220SIS |