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TP65H050WS

TP65H050WS

GANFET N-CH 650V 34A TO247-3

TP65H050WS

TP65H050WS

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Part No :

TP65H050WS

Manufacturer
Transphorm
Description
GANFET N-CH 650V 34A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10451 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
TP65H050WS PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):12V
Rds On (Max) @ Id, Vgs:60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
FET Feature:-
Power Dissipation (Max):119W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
TP65H050WS is available at GangBo-ic.com, Please review product page below for detailed information, including TP65H050WS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TP65H050WS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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