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G2R1000MT33J

G2R1000MT33J

SIC MOSFET N-CH 4A TO263-7

G2R1000MT33J

G2R1000MT33J

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Part No :

G2R1000MT33J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 4A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11130 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 13 - May 17 2024
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):3300 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 20 V
Vgs (Max):+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:238 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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