GANFET N-CH 900V 34A TO247-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Cascode Gallium Nitride FET) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 63mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 4.4V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs: | 17.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 980 pF @ 600 V |
FET Feature: | - |
Power Dissipation (Max): | 119W (Tc) |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RQ3E120BNTBROHM Semiconductor |
MOSFET N-CH 30V 12A 8HSMT |
|
IXFH120N25TWickmann / Littelfuse |
MOSFET N-CH 250V 120A TO247AD |
|
G2R1000MT33JGeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO263-7 |
|
HUFA76429D3SRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
SI7454DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8 |
|
STP40NF20STMicroelectronics |
MOSFET N-CH 200V 40A TO220AB |
|
SFT1350-TL-HRochester Electronics |
MOSFET P-CH 40V 19A TP-FA |
|
FDS4080N7Rochester Electronics |
MOSFET N-CH 40V 13A 8SO |
|
SFT1458-TL-HRochester Electronics |
MOSFET N-CH 600V 1A DPAK/TP-FA |
|
SQS401ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 16A PPAK1212-8 |
|
CSD23285F5TTexas Instruments |
MOSFET P-CH 12V 5.4A 3PICOSTAR |
|
SI3440ADV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 2.2A 6TSOP |
|
2SK3058-AZRochester Electronics |
N-CHANNEL POWER MOSFET |