SICFET N-CH 1000V 35A TO247-4L
Type | Description |
---|---|
Series: | C3M™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 78mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id: | 3.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 35 nC @ 15 V |
Vgs (Max): | +19V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 660 pF @ 600 V |
FET Feature: | - |
Power Dissipation (Max): | 113.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-4L |
Package / Case: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQW61N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 62A TO247AD |
|
RTR040N03TLROHM Semiconductor |
MOSFET N-CH 30V 4A TSMT3 |
|
FDP6035ALRochester Electronics |
MOSFET N-CH 30V 48A TO220-3 |
|
IPL60R385CPAUMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
SI4134DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 14A 8SO |
|
MMSF1310R2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLML6246TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 4.1A SOT23 |
|
DMT8008LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 16A PWRDI3333 |
|
IXTA230N04T4Wickmann / Littelfuse |
MOSFET N-CH 40V 230A TO263AA |
|
IPU80R3K3P7AKMA1Rochester Electronics |
MOSFET N-CH 800V 1.9A TO251-3 |
|
IRLR014PBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
SPD02N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMS7650Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 36A/100A 8PQFN |