MOSFET N-CH 650V 65A TO263
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | - |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 12V |
Rds On (Max) @ Id, Vgs: | 35mOhm @ 50A, 12V |
Vgs(th) (Max) @ Id: | 6V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 51 nC @ 15 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 242W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D2Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CSD18512Q5BTexas Instruments |
MOSFET N-CH 40V 211A 8VSON |
|
SPP08P06PHXKSA1Rochester Electronics |
8.8A, 60V, 0.3OHM, P-CHANNEL, M |
|
SIHD3N50DT5-GE3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
TP0610T-GRoving Networks / Microchip Technology |
MOSFET P-CH 60V 120MA TO236AB |
|
BFL4036Rochester Electronics |
MOSFET N-CH 500V 9.6A TO220F-3FS |
|
BSC034N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 22A/100A TDSON |
|
BSC120N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 12A/39A TDSON |
|
IXTA08N100D2HV-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO263HV |
|
NTMFS4839NT1GRochester Electronics |
MOSFET N-CH 30V 9.5A/64A 5DFN |
|
TK65E10N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 148A TO220 |
|
DMT6005LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13.5A 8SO |
|
FDD6680ASRochester Electronics |
MOSFET N-CH 30V 55A TO252 |
|
NTTFS4H07NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 18.5A/66A 8WDFN |