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TK35N65W,S1F

TK35N65W,S1F

MOSFET N-CH 650V 35A TO247

TK35N65W,S1F

TK35N65W,S1F

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Part No :

TK35N65W,S1F

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 650V 35A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
551155 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
TK35N65W,S1F PDF
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 300 V
FET Feature:-
Power Dissipation (Max):270W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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