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RM21N650T2

RM21N650T2

MOSFET N-CH 650V 21A TO220-3

RM21N650T2

RM21N650T2

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Part No :

RM21N650T2

Manufacturer
Rectron USA
Description
MOSFET N-CH 650V 21A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
488248 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 50 V
FET Feature:-
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
RM21N650T2 is available at GangBo-ic.com, Please review product page below for detailed information, including RM21N650T2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM21N650T2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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