MOSFET N-CH 500V 3.3A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 340 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFI9520GPBFVishay / Siliconix |
MOSFET P-CH 100V 5.2A TO220-3 |
|
FDD7N25LZTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 6.2A DPAK |
|
FDC2612Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 1.1A SUPERSOT6 |
|
IPD50R2K0CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 2.4A TO252-3 |
|
RM2A8N60S4Rectron USA |
MOSFET N-CH 60V 2.8A SOT223-3 |
|
SIHF30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO220 |
|
DMT34M2LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V 30V POWERDI506 |
|
IPB60R170CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 14A TO263-3-2 |
|
AOTL66608Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 73.5A/400A TOLLA |
|
RHK005N03FRAT146ROHM Semiconductor |
MOSFET N-CH 30V 500MA SMT3 |
|
UPA2718AGR-E1-ATRochester Electronics |
MOSFET P-CH 30V 13A 8PSOP |
|
SI1013X-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 350MA SC89-3 |
|
NTMFS4C59NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A/52A 5DFN |