MOSFET N-CH 100V 1.6A SOT223
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 200mOhm @ 1.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 330 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STP5NK50ZFPSTMicroelectronics |
MOSFET N-CH 500V 4.4A TO220FP |
|
IPB65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
YJL2304A-F2-0100HF |
N-CH MOSFET 30V 3.6A SOT-23-3L |
|
AUIRFR48ZTRLIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
IRFS720BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQA10N80C-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 10A TO3P |
|
IRFP254BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCH1335-TL-HRochester Electronics |
MOSFET P-CH 12V 2.5A 6SCH |
|
R5009FNJTLROHM Semiconductor |
MOSFET N-CH 500V 9A LPTS |
|
IXTF200N10TWickmann / Littelfuse |
MOSFET N-CH 100V 90A I4PAC |
|
TK110U65Z,RQToshiba Electronic Devices and Storage Corporation |
DTMOS VI TOLL PD=190W F=1MHZ |
|
NTP8G206NGRochester Electronics |
GANFET N-CH 600V 17A TO220-3 |
|
SIHB18N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 18A TO263 |