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UF3SC065030D8S

UF3SC065030D8S

SICFET N-CH 650V 18A 4DFN

UF3SC065030D8S

UF3SC065030D8S

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Part No :

UF3SC065030D8S

Manufacturer
UnitedSiC
Description
SICFET N-CH 650V 18A 4DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
813681 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):12V
Rds On (Max) @ Id, Vgs:42mOhm @ 20A, 12V
Vgs(th) (Max) @ Id:6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 12 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
FET Feature:-
Power Dissipation (Max):179W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-DFN (8x8)
Package / Case:4-PowerTSFN
UF3SC065030D8S is available at GangBo-ic.com, Please review product page below for detailed information, including UF3SC065030D8S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for UF3SC065030D8S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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