SI PIN, 2.5MM, TO-5, N-TYPE PHOT
Type | Description |
---|---|
Series: | C30808 |
Package: | Box |
Part Status: | Active |
Wavelength: | 900nm |
Color - Enhanced: | - |
Spectral Range: | 400nm ~ 1100nm |
Diode Type: | PIN |
Responsivity @ nm: | 0.6 A/W @ 900nm |
Response Time: | 12ns |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Dark (Typ): | 30nA |
Active Area: | 5mm² |
Viewing Angle: | - |
Operating Temperature: | -40°C ~ 80°C |
Mounting Type: | Through Hole |
Package / Case: | TO-205AA, TO-5-3 Metal Can |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
C30659-1550E-R2AHExcelitas Technologies |
INGAAS APD + AMP, TO-8, 50MHZ, H |
|
C30902SH-2Excelitas Technologies |
SI APD, 0.5MM, LOW NOISE/PHOTON |
|
B2151PD--H9B000233U1930Harvatek Corporation |
3.0 (L)2.0 (W) 1.0 (H) MM PD |
|
MICROFJ-60035-TSV-TRSanyo Semiconductor/ON Semiconductor |
SENSOR PHOTODIODE 420NM 36WBGA |
|
A5C-35OSI Optoelectronics |
35-ELEMENT SILICON PHOTODIODE AR |
|
C30659-1550-R08BHExcelitas Technologies |
INGAAS APD RECEIVER, 80UM, TO-8, |
|
C30618ECERHExcelitas Technologies |
INGAS PIN, 350UM, CERAMIC SUBMOU |
|
BPV22NFLVishay / Semiconductor - Opto Division |
PHOTODIODE 870 TO 1050 NM |
|
LLAM-900-R5BHExcelitas Technologies |
SI APD RECEIVER, 0.5MM, TO-8, 20 |
|
B17M1PD--H9B000114U1930Harvatek Corporation |
2.0(L)X 1. 3 (W)X 0 .8 (H) MM PD |
|
SC-10DOSI Optoelectronics |
10.16X10.16 MM ACTIVE AREA TETRA |
|
02A4A-100-XMDRochester Electronics |
PI200MC-A4 710200-A4 |
|
AFBR-S4N66C013Broadcom |
SIPM CSP 6X6MM 30UM NUVHD |