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H11F1W

H11F1W

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

H11F1W

H11F1W

Image is for reference, please contact us to get the real picture

Part No :

H11F1W

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
OPTOISOLTR 5.3KV PHOTO FET 6-DIP
Catalog
Optoisolators - Transistor, Photovoltaic Output
Availability
581358 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
PDF
H11F1W PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
Number of Channels:1
Voltage - Isolation:5300Vrms
Current Transfer Ratio (Min):-
Current Transfer Ratio (Max):-
Turn On / Turn Off Time (Typ):25µs, 25µs (Max)
Rise / Fall Time (Typ):-
Input Type:DC
Output Type:MOSFET
Voltage - Output (Max):30V
Current - Output / Channel:-
Voltage - Forward (Vf) (Typ):1.3V
Current - DC Forward (If) (Max):60 mA
Vce Saturation (Max):-
Operating Temperature:-55°C ~ 100°C
Mounting Type:Through Hole
Package / Case:6-DIP (0.400", 10.16mm)
Supplier Device Package:6-DIP
H11F1W is available at GangBo-ic.com, Please review product page below for detailed information, including H11F1W price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for H11F1W to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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