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H11F2M

H11F2M

OPTOISOLTR 7.5KV PHOTO FET 6-DIP

MAL215066681E3

MAL215066681E3

CAP ALUM 680UF 20% 25V RADIAL

H11F2M

H11F2M

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Part No :

H11F2M

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
OPTOISOLTR 7.5KV PHOTO FET 6-DIP
Catalog
Optoisolators - Transistor, Photovoltaic Output
Availability
529352 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
H11F2M PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
Number of Channels:1
Voltage - Isolation:7500Vpk
Current Transfer Ratio (Min):-
Current Transfer Ratio (Max):-
Turn On / Turn Off Time (Typ):45µs, 45µs (Max)
Rise / Fall Time (Typ):-
Input Type:DC
Output Type:MOSFET
Voltage - Output (Max):30V
Current - Output / Channel:-
Voltage - Forward (Vf) (Typ):1.3V
Current - DC Forward (If) (Max):60 mA
Vce Saturation (Max):-
Operating Temperature:-40°C ~ 100°C
Mounting Type:Through Hole
Package / Case:6-DIP (0.300", 7.62mm)
Supplier Device Package:6-DIP
H11F2M is available at GangBo-ic.com, Please review product page below for detailed information, including H11F2M price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for H11F2M to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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