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C0805C155K4RALTU

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H11F2W

H11F2W

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

H11F2W

H11F2W

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Part No :

H11F2W

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
OPTOISOLTR 5.3KV PHOTO FET 6-DIP
Catalog
Optoisolators - Transistor, Photovoltaic Output
Availability
589158 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
H11F2W PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
Number of Channels:1
Voltage - Isolation:5300Vrms
Current Transfer Ratio (Min):-
Current Transfer Ratio (Max):-
Turn On / Turn Off Time (Typ):25µs, 25µs (Max)
Rise / Fall Time (Typ):-
Input Type:DC
Output Type:MOSFET
Voltage - Output (Max):30V
Current - Output / Channel:-
Voltage - Forward (Vf) (Typ):1.3V
Current - DC Forward (If) (Max):60 mA
Vce Saturation (Max):-
Operating Temperature:-55°C ~ 100°C
Mounting Type:Through Hole
Package / Case:6-DIP (0.400", 10.16mm)
Supplier Device Package:6-DIP
H11F2W is available at GangBo-ic.com, Please review product page below for detailed information, including H11F2W price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for H11F2W to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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