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H11F1VM

H11F1VM

OPTOISOLTR 7.5KV PHOTO FET 6-DIP

H11F1VM

H11F1VM

Image is for reference, please contact us to get the real picture

Part No :

H11F1VM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
OPTOISOLTR 7.5KV PHOTO FET 6-DIP
Catalog
Optoisolators - Transistor, Photovoltaic Output
Availability
10569 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
H11F1VM PDF
Type Description
Series:-
Package:Tube
Part Status:Active
Number of Channels:1
Voltage - Isolation:7500Vpk
Current Transfer Ratio (Min):-
Current Transfer Ratio (Max):-
Turn On / Turn Off Time (Typ):45µs, 45µs (Max)
Rise / Fall Time (Typ):-
Input Type:DC
Output Type:MOSFET
Voltage - Output (Max):30V
Current - Output / Channel:-
Voltage - Forward (Vf) (Typ):1.3V
Current - DC Forward (If) (Max):60 mA
Vce Saturation (Max):-
Operating Temperature:-40°C ~ 100°C
Mounting Type:Through Hole
Package / Case:6-DIP (0.300", 7.62mm)
Supplier Device Package:6-DIP
H11F1VM is available at GangBo-ic.com, Please review product page below for detailed information, including H11F1VM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for H11F1VM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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