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H11F1M

H11F1M

OPTOISOLTR 7.5KV PHOTO FET 6-DIP

H11F1M

H11F1M

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Part No :

H11F1M

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
OPTOISOLTR 7.5KV PHOTO FET 6-DIP
Catalog
Optoisolators - Transistor, Photovoltaic Output
Availability
054005 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
H11F1M PDF
Type Description
Series:-
Package:Tube
Part Status:Active
Number of Channels:1
Voltage - Isolation:7500Vpk
Current Transfer Ratio (Min):-
Current Transfer Ratio (Max):-
Turn On / Turn Off Time (Typ):45µs, 45µs (Max)
Rise / Fall Time (Typ):-
Input Type:DC
Output Type:MOSFET
Voltage - Output (Max):30V
Current - Output / Channel:-
Voltage - Forward (Vf) (Typ):1.3V
Current - DC Forward (If) (Max):60 mA
Vce Saturation (Max):-
Operating Temperature:-40°C ~ 100°C
Mounting Type:Through Hole
Package / Case:6-DIP (0.300", 7.62mm)
Supplier Device Package:6-DIP
H11F1M is available at GangBo-ic.com, Please review product page below for detailed information, including H11F1M price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for H11F1M to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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