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MIC4123YME

MIC4123YME

DUAL 3A-PEAK LOW-SIDE MOSFET DRI

MIC4123YME

MIC4123YME

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Part No :

MIC4123YME

Manufacturer
Rochester Electronics
Description
DUAL 3A-PEAK LOW-SIDE MOSFET DRI
Catalog
PMIC - Gate Drivers
Availability
33607 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
PDF
MIC4123YME PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel, P-Channel MOSFET
Voltage - Supply:4.5V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.4V
Current - Peak Output (Source, Sink):3A, 3A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):-
Rise / Fall Time (Typ):11ns, 11ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package:8-SOIC
MIC4123YME is available at GangBo-ic.com, Please review product page below for detailed information, including MIC4123YME price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MIC4123YME to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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