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NCV33152DR2G

NCV33152DR2G

BUFFER/INVERTER BASED MOSFET DRI

NCV33152DR2G

NCV33152DR2G

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Part No :

NCV33152DR2G

Manufacturer
Rochester Electronics
Description
BUFFER/INVERTER BASED MOSFET DRI
Catalog
PMIC - Gate Drivers
Availability
16794 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 29 - Nov 02 2025
PDF
NCV33152DR2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:6.1V ~ 18V
Logic Voltage - VIL, VIH:0.8V, 2.6V
Current - Peak Output (Source, Sink):1.5A, 1.5A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):-
Rise / Fall Time (Typ):36ns, 32ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NCV33152DR2G is available at GangBo-ic.com, Please review product page below for detailed information, including NCV33152DR2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NCV33152DR2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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