HALF BRIDGE BASED IGBT/MOSFET DR
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Driven Configuration: | Half-Bridge |
Channel Type: | 3-Phase |
Number of Drivers: | 6 |
Gate Type: | IGBT, N-Channel MOSFET |
Voltage - Supply: | 10V ~ 20V |
Logic Voltage - VIL, VIH: | 0.8V, 2.5V |
Current - Peak Output (Source, Sink): | 200mA, 350mA |
Input Type: | Non-Inverting |
High Side Voltage - Max (Bootstrap): | 600 V |
Rise / Fall Time (Typ): | 125ns, 50ns |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-LCC (J-Lead), 32 Leads |
Supplier Device Package: | 44-PLCC, 32 Leads (16.58x16.58) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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