BUFFER/INVERTER BASED MOSFET DRI
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Driven Configuration: | Low-Side |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | N-Channel, P-Channel MOSFET |
Voltage - Supply: | 4.5V ~ 15V |
Logic Voltage - VIL, VIH: | 0.8V, 2.4V |
Current - Peak Output (Source, Sink): | 2A, 2A |
Input Type: | Inverting |
High Side Voltage - Max (Bootstrap): | - |
Rise / Fall Time (Typ): | 7.5ns, 10ns |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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