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ERA-6VEB2671V

ERA-6VEB2671V

RES 2.67K OHM 0.1% 1/4W 0805

MT53B512M64D8HR-053 WT ES:B

MT53B512M64D8HR-053 WT ES:B

IC DRAM 32GBIT 1866MHZ

MT53B512M64D8HR-053 WT ES:B

MT53B512M64D8HR-053 WT ES:B

Image is for reference, please contact us to get the real picture

Part No :

MT53B512M64D8HR-053 WT ES:B

Manufacturer
Micron Technology
Description
IC DRAM 32GBIT 1866MHZ
Catalog
Memory
Availability
646264 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tray
Part Status:Obsolete
Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:32Gb (512M x 64)
Memory Interface:-
Clock Frequency:1.866 GHz
Write Cycle Time - Word, Page:-
Access Time:-
Voltage - Supply:1.1V
Operating Temperature:-30°C ~ 85°C (TC)
Mounting Type:-
Package / Case:-
Supplier Device Package:-
MT53B512M64D8HR-053 WT ES:B is available at GangBo-ic.com, Please review product page below for detailed information, including MT53B512M64D8HR-053 WT ES:B price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MT53B512M64D8HR-053 WT ES:B to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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