IC EERAM 16KBIT I2C 1MHZ DIE
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EERAM |
Technology: | EEPROM, SRAM |
Memory Size: | 16Kb (2K x 8) |
Memory Interface: | I²C |
Clock Frequency: | 1 MHz |
Write Cycle Time - Word, Page: | 1ms |
Access Time: | 400 ns |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CG8303AACypress Semiconductor |
IC SRAM MICROPOWER 44TSOP II |
|
CG8232AACypress Semiconductor |
IC SRAM MICROPOWER |
|
M27C512-90C6STMicroelectronics |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
M27W202-100K6STMicroelectronics |
IC EPROM 2MBIT PARALLEL 44PLCC |
|
70V25L45J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
MT35XL512ABA1G12-0AAT TRMicron Technology |
IC FLASH 512MBIT XCCELA 24TPBGA |
|
MT29F256G08EBHAFJ4-3RES:AMicron Technology |
IC FLASH 256GBIT PARALLEL 333MHZ |
|
S99PL127J0140Cypress Semiconductor |
IC FLASH |
|
70V07S25J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
CG8690AACypress Semiconductor |
IC SRAM NON VOLATILE 44TSOP |
|
MT29F512G08EMCBBJ5-10:BMicron Technology |
IC FLASH 512GBIT PARALLEL 100MHZ |
|
MT53B256M64D2NK-062 WT ES:CMicron Technology |
IC DRAM 16GBIT 1600MHZ FBGA |
|
MT53B2DANL-DCMicron Technology |
LPDDR4 16G 256MX64 FBGA DDP |