Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 24Gb (384M x 64) |
Memory Interface: | - |
Clock Frequency: | 2.133 GHz |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | 1.1V |
Operating Temperature: | -30°C ~ 105°C (TC) |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS61NVF25672-6.5B1I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
LE25FW056CS-TRM-ESanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT |
|
DS1345BL-70Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 34LPM |
|
M29W800FT70N3F TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
7024S35PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT53D512M64D4RQ-053 WT ES:EMicron Technology |
IC DRAM 32GBIT 1866MHZ 556WFBGA |
|
NAND512R3A2SZA6EMicron Technology |
IC FLSH 512MBIT PARALLEL 63VFBGA |
|
MT48H16M32LFCM-6 L IT:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
MT29F4G08ABBEAM70M3WC1Micron Technology |
IC FLASH 4GBIT PARALLEL WAFER |
|
MT29F128G08CBEBBL85C3WC1Micron Technology |
IC FLASH 128GBIT PARALLEL WAFER |
|
M29F200FT55M3F2 TRMicron Technology |
IC FLASH 2MBIT PARALLEL 44SO |
|
7005L55PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
MT41K256M16TW-107 AT:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |