EEPROM, 64X16, SERIAL, CMOS
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Kb (64 x 16) |
Memory Interface: | SPI |
Clock Frequency: | 250 kHz |
Write Cycle Time - Word, Page: | 15ms |
Access Time: | - |
Voltage - Supply: | 2.7V ~ 5.5V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CG6643AATRochester Electronics |
SPECIAL |
|
MTFC16GAPALHT-AIT TRMicron Technology |
IC FLASH 128GBIT MMC |
|
CAT24C08VP2GI-T3Rochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8TDFN |
|
CAT24C32WGI-T3Rochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
70V24L15JGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
CG7580AARochester Electronics |
SEMICONDUCTOR OTHER |
|
STK20C04-WF25IFlip Electronics |
IC NVSRAM 4KBIT PARALLEL 28DIP |
|
EM6A9160TSC-4GEtron Technology |
IC DRAM 128MBIT PAR 66TSOP II |
|
R1LV0816ASB-5SK#B0Rochester Electronics |
8M SRAM (512K X 16-BIT) |
|
AS6C8016B-55BINTRAlliance Memory, Inc. |
IC SRAM 8MB PARALLEL 48FPBGA |
|
MT53E2G32D4DT-046 WT ES:A TRMicron Technology |
LPDDR4 64G 2GX32 FBGA QDP |
|
MT40A8G4CLU-075H:EMicron Technology |
IC FLASH 32GBIT PAR 78FBGA |
|
MT53D512M64D4NZ-046 WT:EMicron Technology |
IC DRAM 32GBIT 2133MHZ 376WFBGA |