Type | Description |
---|---|
Series: | NoBL™ |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, SDR |
Memory Size: | 18Mb (512K x 36) |
Memory Interface: | Parallel |
Clock Frequency: | 167 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 3.4 ns |
Voltage - Supply: | 2.375V ~ 2.625V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY62128ELL-55ZAXEKJRochester Electronics |
ASYNC RAM |
|
CAT24C08WGERochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
MT53E2D1BFW-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
MTFC8GAMALHT-AITMicron Technology |
IC FLASH 64GBIT MMC |
|
MT53D512M64D4RQ-053 WT:E TRMicron Technology |
IC DRAM 32GBIT 1866MHZ 556WFBGA |
|
MT53D512M64D4NZ-053 WT:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 376WFBGA |
|
MT53E512M64D4NK-053 WT:DMicron Technology |
IC DRAM LPDDR4 FBGA |
|
CY7C182-35SCRochester Electronics |
8KX9 STATIC RAM |
|
4164-15JDS/BEARochester Electronics |
DUAL MARKED (8201006EA) |
|
RM24C32C-LCSI-TAdesto Technologies |
IC CBRAM 32KBIT I2C 1MHZ 6WLCSP |
|
MT40A512M8SA-062E AUT:F TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MX66L51255FXDI-10GMacronix |
IC FLASH 512MBIT |
|
M10162040108X0PSAYRenesas Electronics America |
IC RAM 16MBIT 108MHZ 8SOIC |