IC RLDRAM 1.125GBIT PAR 168BGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | RLDRAM 3 |
Memory Size: | 1.125Gb (64Mb x 18) |
Memory Interface: | Parallel |
Clock Frequency: | 933 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 8 ns |
Voltage - Supply: | 1.28V ~ 1.42V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 168-TBGA |
Supplier Device Package: | 168-BGA (13.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CG6711AMRochester Electronics |
SPECIAL |
|
M30162040054X0IWARRenesas Electronics America |
IC RAM 16MBIT 54MHZ 8DFN |
|
CG7671AARochester Electronics |
SPECIAL |
|
MT62F768M64D4EJ-031 AIT:AMicron Technology |
LPDDR5 48G 768MX64 FBGA QDP |
|
MTFC32GAKAEDQ-AIT TRMicron Technology |
IC FLASH 256GBIT MMC 100LBGA |
|
IS25LE01G-RILEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1GBIT SPI/QUAD 24LFBGA |
|
CAT24C128ZI-GT3Rochester Electronics |
IC EEPROM 128KBIT I2C 1MHZ 8MSOP |
|
M10042040054X0PWARRenesas Electronics America |
IC RAM 4MBIT SPI 54MHZ 8DFN |
|
FM93C66LVMT8Rochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
IS61WV51216EEBLL-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
CG7610AMRochester Electronics |
SEMICONDUCTOR OTHER |
|
27C512AE200/883CRochester Electronics |
512K (64KX8) CMOS EPROM |
|
CAT64LC40YI-GRochester Electronics |
IC EEPROM 4KBIT SPI 1MHZ 8TSSOP |