IC EEPROM 64KBIT PARALLEL 28DIP
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 64Kb (8K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 200µs |
Access Time: | 120 ns |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | 0°C ~ 70°C (TC) |
Mounting Type: | Through Hole |
Package / Case: | 28-DIP (0.600", 15.24mm) |
Supplier Device Package: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IDT71V416S12PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
M27W401-80N6STMicroelectronics |
IC EPROM 4MBIT PARALLEL 32TSOP |
|
7132SA35J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
AT24C512-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DIP |
|
FT24C02A-UNR-TFremont Micro Devices |
IC EEPROM 2KBIT I2C 1MHZ 8DFN |
|
AS7C31026C-10BINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 48BGA |
|
AT25FS010N-SH27-BRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 50MHZ 8SOIC |
|
S29CD016J0PFFM113Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80FBGA |
|
RMWV6416AGSD-5S2#HA0Renesas Electronics America |
IC SRAM 64MBIT PAR 52TSOP II |
|
S29WS512PABBFW000Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 84FBGA |
|
MT47H64M16HR-25E L:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
R1LV0816ABG-7SI#S0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 48FBGA |
|
IS43TR85120A-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |